|
gptkbp:instanceOf
|
transistor
|
|
gptkbp:advantage
|
scalability
fast switching speed
gate oxide breakdown
high input impedance
susceptibility to static discharge
|
|
gptkbp:component
|
gptkb:CMOS_technology
integrated circuits
|
|
gptkbp:controlledBy
|
voltage
|
|
gptkbp:dominantIn
|
semiconductor device market
|
|
gptkbp:enables
|
gptkb:Moore's_Law
low power consumption
high-speed switching
miniaturization of electronics
|
|
gptkbp:fabricatedOn
|
gptkb:gallium_arsenide
silicon
|
|
gptkbp:fullName
|
gptkb:Metal-Oxide-Semiconductor_Field-Effect_Transistor
|
|
gptkbp:hasApplication
|
microprocessors
power supplies
audio amplifiers
memory chips
motor drivers
|
|
gptkbp:hasTerminal
|
gate
body
source
drain
|
|
gptkbp:hasType
|
gptkb:depletion-mode_MOSFET
gptkb:enhancement-mode_MOSFET
gptkb:n-channel_MOSFET
gptkb:p-channel_MOSFET
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
MOSFETs
|
|
gptkbp:inventedBy
|
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla
1959
|
|
gptkbp:massProducedSince
|
1960s
|
|
gptkbp:relatedTo
|
gptkb:BJT
gptkb:IGBT
gptkb:JFET
|
|
gptkbp:replacedBy
|
bipolar junction transistor in some applications
|
|
gptkbp:standardizedBy
|
gptkb:JEDEC
|
|
gptkbp:subspecies
|
gptkb:battery
gptkb:FinFET
gptkb:SOI_MOSFET
gptkb:planar_MOSFET
gptkb:trench_MOSFET
|
|
gptkbp:symbol
|
three-terminal device with insulated gate
|
|
gptkbp:usedIn
|
gptkb:consumer_electronics
digital circuits
switching circuits
automotive electronics
power electronics
industrial control systems
analog circuits
amplifiers
radio frequency applications
|
|
gptkbp:bfsParent
|
gptkb:Dennard_scaling
gptkb:Siliconix
gptkb:TO-220
gptkb:Vishay_Intertechnology
gptkb:TO-247
gptkb:Vishay
|
|
gptkbp:bfsLayer
|
5
|