Statements (49)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:advantage |
low power consumption
high input impedance fast switching |
| gptkbp:application |
gptkb:signal_processing
gptkb:RF_amplifiers industrial equipment logic gates power supplies audio amplifiers rectifiers solar inverters analog switches level shifters lighting control voltage regulators battery management systems DC-DC converters motor drivers inverters load switches |
| gptkbp:channelFormedBy |
applying gate voltage
|
| gptkbp:controlledBy |
electric field
|
| gptkbp:gateInsulator |
gptkb:silicon_dioxide
|
| gptkbp:hasTerminal |
gate
body source drain |
| gptkbp:hasType |
n-channel
p-channel |
| https://www.w3.org/2000/01/rdf-schema#label |
enhancement-mode MOSFET
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:material |
gptkb:gallium_nitride
silicon silicon carbide |
| gptkbp:mode |
normally off
|
| gptkbp:relatedTo |
gptkb:depletion-mode_MOSFET
|
| gptkbp:requiresGateVoltage |
negative for p-channel
positive for n-channel |
| gptkbp:status |
no channel
|
| gptkbp:symbol |
E-MOSFET symbol
|
| gptkbp:usedIn |
gptkb:CMOS_technology
digital circuits integrated circuits power electronics amplifiers switching applications |
| gptkbp:bfsParent |
gptkb:MOSFETs
|
| gptkbp:bfsLayer |
6
|