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gptkbp:instanceOf
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gptkb:microprocessor
gptkb:transistor
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gptkbp:advantage
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low noise
high input impedance
limited gain
lower transconductance than MOSFET
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gptkbp:category
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gptkb:microprocessor
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gptkbp:contrastsWith
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gptkb:battery
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gptkbp:controlledBy
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voltage
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gptkbp:datasheet
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gptkb:IDSS
PD (power dissipation)
VDS(max)
VGS(off)
gm (transconductance)
rDS(on)
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gptkbp:feature
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channel pinch-off
depletion-mode device
linear and saturation regions
no gate current in ideal operation
unipolar device
voltage-controlled device
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gptkbp:hasTerminal
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gptkb:gate
gptkb:drain
source
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gptkbp:hasType
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n-channel
p-channel
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gptkbp:inventedBy
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gptkb:Heinrich_Welker
1945
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gptkbp:marketedAs
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gptkb:Fairchild_Semiconductor
gptkb:Texas_Instruments
gptkb:ON_Semiconductor
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gptkbp:material
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gptkb:gallium_arsenide
silicon
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gptkbp:operates
|
reverse biasing the gate
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gptkbp:relatedTo
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gptkb:battery
gptkb:BJT
gptkb:IGFET
|
|
gptkbp:standsFor
|
gptkb:Junction_Field-Effect_Transistor
|
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gptkbp:symbol
|
⎯|< (n-channel)
⎯|> (p-channel)
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|
gptkbp:usedFor
|
amplification
switching
|
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gptkbp:usedIn
|
mixers
analog circuits
oscillators
audio preamplifiers
buffer amplifiers
voltage-controlled resistors
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gptkbp:bfsParent
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gptkb:MOSFETs
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gptkbp:bfsLayer
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6
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https://www.w3.org/2000/01/rdf-schema#label
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JFET
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