|
gptkbp:instanceOf
|
gptkb:microprocessor
transistor
|
|
gptkbp:advantage
|
low noise
high input impedance
limited gain
lower transconductance than MOSFET
|
|
gptkbp:category
|
gptkb:microprocessor
|
|
gptkbp:contrastsWith
|
gptkb:battery
|
|
gptkbp:controlledBy
|
voltage
|
|
gptkbp:datasheet
|
gptkb:IDSS
PD (power dissipation)
VDS(max)
VGS(off)
gm (transconductance)
rDS(on)
|
|
gptkbp:feature
|
channel pinch-off
depletion-mode device
linear and saturation regions
no gate current in ideal operation
unipolar device
voltage-controlled device
|
|
gptkbp:hasTerminal
|
gate
source
drain
|
|
gptkbp:hasType
|
n-channel
p-channel
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
JFET
|
|
gptkbp:inventedBy
|
gptkb:Heinrich_Welker
1945
|
|
gptkbp:marketedAs
|
gptkb:Fairchild_Semiconductor
gptkb:Texas_Instruments
gptkb:ON_Semiconductor
|
|
gptkbp:material
|
gptkb:gallium_arsenide
silicon
|
|
gptkbp:operates
|
reverse biasing the gate
|
|
gptkbp:relatedTo
|
gptkb:battery
gptkb:BJT
gptkb:IGFET
|
|
gptkbp:standsFor
|
gptkb:Junction_Field-Effect_Transistor
|
|
gptkbp:symbol
|
⎯|< (n-channel)
⎯|> (p-channel)
|
|
gptkbp:usedFor
|
amplification
switching
|
|
gptkbp:usedIn
|
mixers
analog circuits
oscillators
audio preamplifiers
buffer amplifiers
voltage-controlled resistors
|
|
gptkbp:bfsParent
|
gptkb:battery
|
|
gptkbp:bfsLayer
|
4
|