Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:advantage |
high speed
high input impedance low on-resistance requires positive gate voltage to turn on susceptible to static discharge |
| gptkbp:controlledBy |
gate voltage
|
| gptkbp:hasApplication |
gptkb:CMOS_technology
amplification switching |
| gptkbp:hasChannel |
n-type
|
| gptkbp:hasComplementaryDevice |
gptkb:p-channel_MOSFET
|
| gptkbp:hasDepletionMode |
yes
|
| gptkbp:hasDrainType |
n-type
|
| gptkbp:hasEnhancementMode |
yes
|
| gptkbp:hasGateMaterial |
gptkb:polysilicon
metal |
| gptkbp:hasMajorityCarrier |
electron
|
| gptkbp:hasSourceType |
n-type
|
| gptkbp:hasSubstrateType |
p-type
|
| gptkbp:hasThresholdVoltage |
positive
|
| gptkbp:hasType |
transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
n-channel MOSFET
|
| gptkbp:inventedBy |
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla 1960 |
| gptkbp:polarization |
n-type
|
| gptkbp:symbol |
N-MOSFET symbol
|
| gptkbp:usedIn |
gptkb:RF_amplifiers
digital circuits logic gates microprocessors power supplies integrated circuits LED drivers audio amplifiers power electronics memory chips analog circuits analog switches level shifters voltage regulators DC-DC converters motor drivers battery protection circuits load switches switching regulators |
| gptkbp:bfsParent |
gptkb:MOSFETs
|
| gptkbp:bfsLayer |
6
|