|
gptkbp:instanceOf
|
gptkb:microprocessor
gptkb:transistor
|
|
gptkbp:advantage
|
high speed
high input impedance
low on-resistance
requires positive gate voltage to turn on
susceptible to static discharge
|
|
gptkbp:controlledBy
|
gate voltage
|
|
gptkbp:hasApplication
|
gptkb:CMOS_technology
amplification
switching
|
|
gptkbp:hasChannel
|
n-type
|
|
gptkbp:hasComplementaryDevice
|
gptkb:p-channel_MOSFET
|
|
gptkbp:hasDepletionMode
|
yes
|
|
gptkbp:hasDrainType
|
n-type
|
|
gptkbp:hasEnhancementMode
|
yes
|
|
gptkbp:hasGateMaterial
|
gptkb:metal
gptkb:polysilicon
|
|
gptkbp:hasMajorityCarrier
|
electron
|
|
gptkbp:hasSourceType
|
n-type
|
|
gptkbp:hasSubstrateType
|
p-type
|
|
gptkbp:hasThresholdVoltage
|
positive
|
|
gptkbp:hasType
|
gptkb:transistor
|
|
gptkbp:inventedBy
|
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla
1960
|
|
gptkbp:polarization
|
n-type
|
|
gptkbp:symbol
|
N-MOSFET symbol
|
|
gptkbp:usedIn
|
gptkb:RF_amplifiers
digital circuits
logic gates
microprocessors
power supplies
integrated circuits
LED drivers
audio amplifiers
power electronics
memory chips
analog circuits
analog switches
level shifters
voltage regulators
DC-DC converters
motor drivers
battery protection circuits
load switches
switching regulators
|
|
gptkbp:bfsParent
|
gptkb:MOSFETs
|
|
gptkbp:bfsLayer
|
6
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
n-channel MOSFET
|