Statements (53)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Company
|
| gptkbp:hasAwards |
n-type region
|
| gptkbp:hasCitations |
Vgs(th)
|
| gptkbp:hasContent |
high efficiency
fast switching speed requires higher gate voltage |
| gptkbp:hasFacility |
metal or polysilicon
|
| gptkbp:hasParticipatedIn |
n-type region
|
| gptkbp:hasType |
Field-effect transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
n-channel MOSFET
|
| gptkbp:isAvailableIn |
various package types
|
| gptkbp:isCharacterizedBy |
gate capacitance
on-resistance transconductance drain current |
| gptkbp:isFacilitatedBy |
gate voltage
|
| gptkbp:isFundedBy |
various semiconductor companies
|
| gptkbp:isPartOf |
integrated circuits
H-bridge circuits |
| gptkbp:isTestedFor |
thermal performance
electrical performance |
| gptkbp:isUsedFor |
gptkb:p-channel_MOSFET
analog circuits digital circuits |
| gptkbp:isUsedIn |
automotive applications
computers consumer electronics electric vehicles home appliances industrial equipment medical devices robotics smartphones solar inverters drones signal processing amplifiers audio amplifiers renewable energy systems battery management systems LED drivers motor control power electronics voltage regulators televisions RF amplifiers power supply circuits telecommunication devices switching applications class D amplifiers DC-DC_converters |
| gptkbp:operatedBy |
controlling current flow
|
| gptkbp:uses |
n-type semiconductor
|