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gptkbp:instanceOf
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gptkb:microprocessor
transistor
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gptkbp:abbreviation
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gptkb:BJT
gptkb:IGBT
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gptkbp:advantage
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high efficiency
fast switching
low on-state voltage drop
latch-up risk
limited switching frequency
tail current
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gptkbp:alternativeName
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Insulated_Gate_Bipolar_Transistor
Transistor
bipolar_junction_transistor
diode
field-effect_transistor
transistor_radio
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gptkbp:application
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digital circuits
analog circuits
oscillators
signal modulation
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gptkbp:baseCurrent
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required
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gptkbp:category
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gptkb:microprocessor
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gptkbp:collectorCurrent
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controlled by base current
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gptkbp:combines
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gptkb:battery
gptkb:Bipolar_Junction_Transistor
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gptkbp:currentControlled
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yes
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gptkbp:emitterCurrent
|
sum of base and collector currents
|
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gptkbp:failureMode
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thermal runaway
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gptkbp:frequency
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limited by transit time
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gptkbp:hasApplication
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high-power applications
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gptkbp:hasFeature
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gptkb:JEDEC
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gptkbp:hasGain
|
current gain (beta)
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gptkbp:hasGate
|
insulated gate
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gptkbp:hasJunctionWith
|
two
|
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gptkbp:hasLayers
|
three
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gptkbp:hasPackage
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gptkb:model
gptkb:TO-220
gptkb:TO-247
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gptkbp:hasRelatedDevice
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gptkb:battery
gptkb:SCR
gptkb:GTO
gptkb:Bipolar_Junction_Transistor
gptkb:SiC_MOSFET
thyristor
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gptkbp:hasSwitchingSpeed
|
moderate
|
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gptkbp:hasTerminal
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gptkb:foundation
collector
gate
emitter
|
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gptkbp:hasType
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gptkb:NPN
gptkb:PNP
voltage-controlled
|
|
gptkbp:hasVoltageRating
|
high
|
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gptkbp:introducedIn
|
1947
|
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gptkbp:inventedBy
|
gptkb:John_Bardeen
gptkb:Walter_Brattain
gptkb:William_Shockley
gptkb:B._Jayant_Baliga
1980s
|
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gptkbp:marketedAs
|
gptkb:ABB
gptkb:STMicroelectronics
gptkb:Mitsubishi_Electric
gptkb:Toshiba
gptkb:ON_Semiconductor
gptkb:Fuji_Electric
gptkb:Infineon_Technologies
gptkb:Rohm_Semiconductor
gptkb:Vishay_Intertechnology
|
|
gptkbp:massProducedSince
|
1950s
|
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gptkbp:material
|
silicon
germanium
silicon carbide
|
|
gptkbp:operates
|
minority carrier injection
|
|
gptkbp:rating
|
high
|
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gptkbp:region
|
gptkb:region
cutoff region
inverse active region
saturation region
|
|
gptkbp:relatedTo
|
transistor
unipolar transistor
|
|
gptkbp:replacedVacuumTube
|
yes
|
|
gptkbp:standardizedBy
|
gptkb:JEDEC
|
|
gptkbp:symbol
|
gptkb:Q
three-terminal device
|
|
gptkbp:type
|
gptkb:SOT-23
TO-3
TO-92
|
|
gptkbp:usedFor
|
amplification
switching
|
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gptkbp:usedIn
|
electric vehicles
computers
radios
audio amplifiers
power electronics
renewable energy systems
switching power supplies
inverters
motor drives
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gptkbp:voltageControlled
|
no
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gptkbp:bfsParent
|
gptkb:John_Bardeen
|
|
gptkbp:bfsLayer
|
3
|