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gptkbp:instanceOf
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gptkb:battery
gptkb:microprocessor
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gptkbp:advantage
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low power consumption
high input impedance
high density integration
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gptkbp:category
|
transistor
|
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gptkbp:dominantIn
|
semiconductor industry (20th century)
|
|
gptkbp:drainedBy
|
semiconductor substrate
|
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gptkbp:enables
|
scaling of microelectronics
|
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gptkbp:fabricationProcess
|
gptkb:planar_process
|
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gptkbp:hasChannel
|
p-type
n-type
|
|
gptkbp:hasGate
|
metal or polysilicon electrode
|
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gptkbp:hasGateMaterial
|
gptkb:polysilicon
metal
|
|
gptkbp:hasInsulator
|
gptkb:silicon_dioxide
|
|
gptkbp:hasOxideLayer
|
gate oxide
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
planar MOSFET
|
|
gptkbp:introducedIn
|
1959
early integrated circuits
|
|
gptkbp:inventedBy
|
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla
|
|
gptkbp:operates
|
field effect
|
|
gptkbp:replacedBy
|
gptkb:finFET
bipolar junction transistor (in many applications)
|
|
gptkbp:source
|
semiconductor substrate
|
|
gptkbp:structure
|
planar
|
|
gptkbp:usedFor
|
gptkb:digital_logic
analog circuits
|
|
gptkbp:usedIn
|
integrated circuits
|
|
gptkbp:bfsParent
|
gptkb:MOSFETs
gptkb:FinFET
|
|
gptkbp:bfsLayer
|
6
|