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gptkbp:instanceOf
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gptkb:microprocessor
transistor
|
|
gptkbp:advantage
|
gptkb:bulk_MOSFET
higher manufacturing cost
self-heating effect
|
|
gptkbp:application
|
high-performance computing
low-power electronics
radiation-hardened electronics
|
|
gptkbp:benefit
|
reduced leakage current
higher integration density
improved device isolation
|
|
gptkbp:component
|
gptkb:CMOS_technology
|
|
gptkbp:contrastsWith
|
gptkb:bulk_MOSFET
|
|
gptkbp:feature
|
lower power consumption
improved speed
better short-channel control
reduced parasitic capacitance
|
|
gptkbp:fullName
|
gptkb:Silicon-On-Insulator_Metal-Oxide-Semiconductor_Field-Effect_Transistor
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
SOI MOSFET
|
|
gptkbp:inventedBy
|
1980s
|
|
gptkbp:relatedTo
|
gptkb:FinFET
gptkb:FD-SOI
|
|
gptkbp:structure
|
buried oxide layer
handle wafer
thin silicon layer
|
|
gptkbp:substrate
|
gptkb:silicon-on-insulator
|
|
gptkbp:type
|
gptkb:fully_depleted_SOI_MOSFET
gptkb:partially_depleted_SOI_MOSFET
|
|
gptkbp:usedIn
|
microprocessors
integrated circuits
RF applications
|
|
gptkbp:bfsParent
|
gptkb:MOSFETs
|
|
gptkbp:bfsLayer
|
6
|