Metal-Oxide-Semiconductor Field-Effect Transistor
GPTKB entity
Statements (34)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
transistor
|
| gptkbp:abbreviation |
gptkb:battery
|
| gptkbp:application |
microprocessors
power electronics memory chips |
| gptkbp:category |
gptkb:microprocessor
transistor |
| gptkbp:controls |
current between source and drain
|
| gptkbp:feature |
low power consumption
scalability fast switching speed high input impedance |
| gptkbp:hasComponent |
gate
source substrate drain oxide layer |
| gptkbp:hasType |
gptkb:depletion-mode_MOSFET
gptkb:enhancement-mode_MOSFET gptkb:n-channel_MOSFET gptkb:p-channel_MOSFET |
| https://www.w3.org/2000/01/rdf-schema#label |
Metal-Oxide-Semiconductor Field-Effect Transistor
|
| gptkbp:introducedIn |
1959
|
| gptkbp:inventedBy |
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla |
| gptkbp:material |
gptkb:silicon_dioxide
silicon |
| gptkbp:operates |
voltage applied to gate
|
| gptkbp:replacedBy |
bipolar junction transistor in many applications
|
| gptkbp:usedIn |
digital circuits
integrated circuits analog circuits |
| gptkbp:bfsParent |
gptkb:MOSFETs
|
| gptkbp:bfsLayer |
6
|