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gptkbp:instanceOf
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gptkb:microprocessor
transistor
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|
gptkbp:advantage
|
lower power consumption
improved scalability
reduced leakage current
better control of channel
higher drive current
|
|
gptkbp:alsoKnownAs
|
gptkb:fin_field-effect_transistor
|
|
gptkbp:application
|
gptkb:consumer_electronics
high-performance computing
mobile devices
|
|
gptkbp:category
|
MOSFET variant
non-planar transistor
|
|
gptkbp:channelMaterial
|
silicon
silicon-germanium
|
|
gptkbp:developedBy
|
gptkb:University_of_California,_Berkeley
gptkb:Digh_Hisamoto
|
|
gptkbp:enables
|
Moore's Law continuation
higher transistor density
smaller transistors
|
|
gptkbp:fabricationProcess
|
gptkb:CMOS_technology
|
|
gptkbp:feature
|
multiple gates
3D structure
fin-shaped channel
|
|
gptkbp:firstDemonstrated
|
1998
|
|
gptkbp:gateType
|
multi-gate
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
FinFET
|
|
gptkbp:improves
|
short-channel effect
subthreshold slope
|
|
gptkbp:patent
|
1999
|
|
gptkbp:relatedTo
|
gptkb:GAAFET
gptkb:trigate_transistor
|
|
gptkbp:replacedBy
|
gptkb:planar_MOSFET
gptkb:bulk_CMOS
|
|
gptkbp:structure
|
gate wraps around fin
vertical fin
|
|
gptkbp:usedBy
|
gptkb:Samsung
gptkb:Intel
gptkb:TSMC
|
|
gptkbp:usedIn
|
gptkb:system-on-chip_(SoC)
microprocessors
integrated circuits
memory chips
|
|
gptkbp:usedInProcessNode
|
14nm
22nm
7nm
10nm
|
|
gptkbp:bfsParent
|
gptkb:Intel_7
|
|
gptkbp:bfsLayer
|
5
|