Statements (35)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:battery
transistor |
| gptkbp:category |
gptkb:microprocessor
|
| gptkbp:charge |
hole
|
| gptkbp:complement |
gptkb:n-channel_MOSFET
|
| gptkbp:gateMaterial |
gptkb:polysilicon
metal |
| gptkbp:hasDrainType |
p-type
|
| gptkbp:hasGateOxide |
gptkb:silicon_dioxide
|
| gptkbp:hasSourceType |
p-type
|
| gptkbp:hasSubstrateType |
n-type
|
| gptkbp:hasTerminal |
gate
body source drain |
| gptkbp:hasType |
transistor
|
| https://www.w3.org/2000/01/rdf-schema#label |
p-channel MOSFET
|
| gptkbp:inventedBy |
gptkb:Dawon_Kahng
gptkb:Martin_M._Atalla 1960 |
| gptkbp:symbol |
MOSFET symbol with arrow pointing out
|
| gptkbp:turnsOffWhen |
gate voltage is higher than source
|
| gptkbp:turnsOnWhen |
gate voltage is lower than source
|
| gptkbp:usedFor |
amplification
switching high-side switching level shifting load transistor |
| gptkbp:usedIn |
gptkb:CMOS_technology
digital circuits power electronics analog circuits |
| gptkbp:YouTubeChannel |
p-type
|
| gptkbp:bfsParent |
gptkb:MOSFETs
|
| gptkbp:bfsLayer |
6
|