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gptkbp:instanceOf
|
gptkb:microprocessor
|
|
gptkbp:advantage
|
high input impedance
fast switching
high current capability
low on-state power loss
|
|
gptkbp:applicationCurrentRange
|
tens to hundreds of amperes
|
|
gptkbp:applicationVoltageRange
|
hundreds to thousands of volts
|
|
gptkbp:combines
|
gptkb:battery
gptkb:BJT
|
|
gptkbp:controlledBy
|
voltage at gate
|
|
gptkbp:failureMode
|
latch-up
thermal runaway
overcurrent
overvoltage breakdown
|
|
gptkbp:fullName
|
gptkb:transistor
|
|
gptkbp:inventedBy
|
gptkb:B._Jayant_Baliga
1980s
|
|
gptkbp:mainTerminal
|
gptkb:collector
gptkb:gate
emitter
|
|
gptkbp:marketLeaders
|
gptkb:ABB
gptkb:Hitachi
gptkb:STMicroelectronics
gptkb:Mitsubishi_Electric
gptkb:Toshiba
gptkb:ON_Semiconductor
gptkb:Fuji_Electric
gptkb:Infineon_Technologies
gptkb:Vishay_Intertechnology
gptkb:Semikron
|
|
gptkbp:material
|
silicon
silicon carbide
|
|
gptkbp:relatedTo
|
gptkb:battery
gptkb:GTO
gptkb:BJT
gptkb:SiC_MOSFET
thyristor
|
|
gptkbp:standardPackageTypes
|
gptkb:model
gptkb:TO-220
gptkb:D2PAK
gptkb:SOT-227
gptkb:TO-247
|
|
gptkbp:symbol
|
three-terminal device
|
|
gptkbp:usedIn
|
electric vehicles
power electronics
induction heating
renewable energy systems
switching power supplies
welding equipment
inverters
motor drives
traction systems
|
|
gptkbp:bfsParent
|
gptkb:MOSFETs
gptkb:Silicon_Controlled_Rectifier
|
|
gptkbp:bfsLayer
|
6
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
IGBT
|