IGBT

GPTKB entity

Statements (56)
Predicate Object
gptkbp:instanceOf gptkb:microprocessor
gptkbp:advantage high input impedance
fast switching
high current capability
low on-state power loss
gptkbp:applicationCurrentRange tens to hundreds of amperes
gptkbp:applicationVoltageRange hundreds to thousands of volts
gptkbp:combines gptkb:battery
gptkb:BJT
gptkbp:controlledBy voltage at gate
gptkbp:failureMode latch-up
thermal runaway
overcurrent
overvoltage breakdown
gptkbp:fullName transistor
https://www.w3.org/2000/01/rdf-schema#label IGBT
gptkbp:inventedBy gptkb:B._Jayant_Baliga
1980s
gptkbp:mainTerminal collector
gate
emitter
gptkbp:marketLeaders gptkb:ABB
gptkb:Hitachi
gptkb:STMicroelectronics
gptkb:Mitsubishi_Electric
gptkb:Toshiba
gptkb:ON_Semiconductor
gptkb:Fuji_Electric
gptkb:Infineon_Technologies
gptkb:Vishay_Intertechnology
gptkb:Semikron
gptkbp:material silicon
silicon carbide
gptkbp:relatedTo gptkb:battery
gptkb:GTO
gptkb:BJT
gptkb:SiC_MOSFET
thyristor
gptkbp:standardPackageTypes gptkb:model
gptkb:TO-220
gptkb:D2PAK
gptkb:SOT-227
gptkb:TO-247
gptkbp:symbol three-terminal device
gptkbp:usedIn electric vehicles
power electronics
induction heating
renewable energy systems
switching power supplies
welding equipment
inverters
motor drives
traction systems
gptkbp:bfsParent gptkb:battery
gptkb:transistor
gptkbp:bfsLayer 4