Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:battery
gptkb:microprocessor |
| gptkbp:advantage |
high efficiency
high current capability low on-resistance |
| gptkbp:application |
power management
battery protection load switching |
| gptkbp:contrastsWith |
gptkb:planar_MOSFET
|
| gptkbp:developedBy |
gptkb:Hitachi
|
| gptkbp:fabricationProcess |
photolithography
reactive ion etching |
| gptkbp:feature |
trench gate structure
|
| gptkbp:gateMaterial |
gptkb:polysilicon
|
| gptkbp:hasHigh |
cell density
|
| gptkbp:hasLow |
specific on-resistance
|
| https://www.w3.org/2000/01/rdf-schema#label |
trench MOSFET
|
| gptkbp:introducedIn |
1990s
|
| gptkbp:structureType |
vertical MOSFET
|
| gptkbp:technology |
deep trench etching
|
| gptkbp:usedIn |
automotive electronics
power electronics DC-DC converters switching power supplies motor drives |
| gptkbp:YouTubeChannel |
vertical channel
|
| gptkbp:bfsParent |
gptkb:MOSFETs
|
| gptkbp:bfsLayer |
6
|