Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:advantage |
high gain
higher power consumption than MOSFET lower input impedance than MOSFET thermal runaway risk |
| gptkbp:characteristic |
sensitive to temperature
current-controlled device exhibits gain |
| gptkbp:controlledBy |
base current
|
| gptkbp:fabricatedFrom |
gptkb:gallium_arsenide
silicon germanium |
| gptkbp:foundIn |
computers
power supplies radios audio amplifiers |
| gptkbp:hasApplication |
digital circuits
analog circuits oscillators signal amplification |
| gptkbp:hasFeature |
gptkb:IEC
gptkb:JEDEC |
| gptkbp:hasTerminal |
gptkb:foundation
collector emitter |
| gptkbp:hasType |
gptkb:NPN
gptkb:PNP |
| https://www.w3.org/2000/01/rdf-schema#label |
BJT
|
| gptkbp:inventedBy |
gptkb:John_Bardeen
gptkb:Walter_Brattain gptkb:William_Shockley 1947 |
| gptkbp:mode |
active mode
reverse-active mode saturation mode cutoff mode |
| gptkbp:operates |
minority carrier injection
|
| gptkbp:parameter |
Ib (base current)
Ic (collector current) Vbe (base-emitter voltage) Vce (collector-emitter voltage) beta (current gain) |
| gptkbp:replacedBy |
MOSFET in many applications
|
| gptkbp:standsFor |
gptkb:Bipolar_Junction_Transistor
|
| gptkbp:symbol |
three-terminal device
|
| gptkbp:usedFor |
amplification
switching |
| gptkbp:usedIn |
integrated circuits
discrete circuits |
| gptkbp:bfsParent |
gptkb:transistor
|
| gptkbp:bfsLayer |
4
|