|
gptkb:FeRAM
|
polarization of ferroelectric layer
|
|
gptkb:floating-gate_MOSFET
|
trapped electrons
|
|
gptkb:Ovonic_memory
|
changing phase of material
|
|
gptkb:resistive_RAM
|
changing resistance
|
|
gptkb:Magnetoresistive_RAM_(MRAM)
|
magnetic storage elements
|
|
gptkb:magnetoresistive_random-access_memory
|
magnetic states
|
|
gptkb:Resistive_RAM_(ReRAM)
|
changing resistance
|
|
gptkb:STT-RAM
|
magnetic orientation
|
|
gptkb:ReRAM
|
changing resistance
|
|
gptkb:Resistive_RAM
|
changing resistance
|
|
gptkb:magnetic-core_memory
|
magnetizing ferrite cores
|
|
gptkb:MRAM
|
magnetic states
|
|
gptkb:Phase_Change_Memory_(PCM)
|
changing phase of material
|
|
gptkb:Content_Addressable_Storage
|
content hash
|