Phase Change Memory (PCM)

GPTKB entity

Statements (47)
Predicate Object
gptkbp:instanceOf gptkb:SDRAM
data storage technology
gptkbp:advantage low latency
high endurance
limited write cycles
higher cost than flash
bit-alterability
gptkbp:alternativeName gptkb:PRAM
PCRAM
Ovonic Unified Memory
gptkbp:application gptkb:storage-class_memory
embedded systems
mobile devices
gptkbp:canBe gptkb:artificial_intelligence
data centers
high-performance computing
automotive electronics
neuromorphic computing
universal memory
gptkbp:cellType single-level cell
multi-level cell
gptkbp:component antimony
tellurium
germanium
gptkbp:contrastsWith gptkb:SDRAM
gptkbp:developedBy gptkb:Intel
gptkb:STMicroelectronics
gptkbp:firstDemonstrated 1960s
https://www.w3.org/2000/01/rdf-schema#label Phase Change Memory (PCM)
gptkbp:ISOStandard gptkb:IEEE_1667
gptkbp:marketedAs gptkb:Samsung
gptkb:Intel
gptkb:STMicroelectronics
Micron
gptkbp:material chalcogenide glass
gptkbp:phaseStates crystalline
amorphous
gptkbp:product gptkb:3D_XPoint
gptkbp:readBy gptkb:fire
gptkbp:retainsDataWithoutPower true
gptkbp:size good
gptkbp:storesDataBy changing phase of material
gptkbp:usesEffect gptkb:Joule_heating
phase transition
gptkbp:writeSpeed gptkb:fire
gptkbp:bfsParent gptkb:SCM_(Storage_Class_Memory)
gptkbp:bfsLayer 8