Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
gptkb:magnetoresistive_random-access_memory |
| gptkbp:abbreviation |
Spin-Transfer Torque Random Access Memory
|
| gptkbp:advantage |
low power consumption
high endurance fast read/write speed |
| gptkbp:application |
cache memory
embedded memory storage class memory |
| gptkbp:challenge |
scalability
manufacturing complexity write current reduction |
| gptkbp:contrastsWith |
gptkb:SDRAM
SRAM Flash memory |
| gptkbp:developedBy |
multiple semiconductor companies
|
| gptkbp:firstDemonstrated |
mid-2000s
|
| https://www.w3.org/2000/01/rdf-schema#label |
STT-RAM
|
| gptkbp:isNonVolatile |
true
|
| gptkbp:material |
magnetic tunnel junction
|
| gptkbp:potentialReplacementFor |
gptkb:SDRAM
SRAM Flash memory |
| gptkbp:researchArea |
spintronics
|
| gptkbp:retainsDataWhenPoweredOff |
true
|
| gptkbp:storesDataBy |
magnetic orientation
|
| gptkbp:uses |
spin-transfer torque
|
| gptkbp:bfsParent |
gptkb:spin-transfer_torque_RAM
|
| gptkbp:bfsLayer |
7
|