Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
memory technology |
| gptkbp:abbreviation |
gptkb:ReRAM
|
| gptkbp:advantage |
low power consumption
scalability fast switching speed high endurance |
| gptkbp:alternativeName |
RRAM
|
| gptkbp:canBe |
gptkb:artificial_intelligence
gptkb:Internet_of_Things cryptography wearable devices mobile devices edge computing hardware security automotive electronics in-memory computing energy-efficient computing space electronics storage class memory machine learning accelerators logic-in-memory secure memory |
| gptkbp:contrastsWith |
gptkb:SDRAM
|
| gptkbp:dataRetention |
years
|
| gptkbp:developedBy |
various companies
|
| gptkbp:endurance |
10^6 cycles or more
|
| gptkbp:firstDemonstrated |
early 2000s
|
| https://www.w3.org/2000/01/rdf-schema#label |
Resistive RAM
|
| gptkbp:material |
transition metal oxides
nickel oxide copper oxide hafnium oxide perovskite oxides titanium oxide |
| gptkbp:storesDataBy |
changing resistance
|
| gptkbp:structure |
metal-insulator-metal
|
| gptkbp:studiedBy |
gptkb:Fujitsu
gptkb:HP_Labs gptkb:Panasonic gptkb:Samsung gptkb:IMEC Crossbar Inc. |
| gptkbp:switchingMechanism |
filamentary
interface-type |
| gptkbp:usedIn |
embedded systems
data storage neuromorphic computing |
| gptkbp:writeSpeed |
nanoseconds
|
| gptkbp:bfsParent |
gptkb:Sentaurus
|
| gptkbp:bfsLayer |
7
|