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gptkbp:instanceOf
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gptkb:SDRAM
memory technology
|
|
gptkbp:advantage
|
lower power consumption
better scalability
faster switching speed
higher endurance
|
|
gptkbp:alsoKnownAs
|
RRAM
|
|
gptkbp:canBe
|
gptkb:storage-class_memory
neuromorphic computing
embedded memory
|
|
gptkbp:cellSize
|
small
|
|
gptkbp:commercialUse
|
gptkb:Panasonic
gptkb:Adesto_Technologies
Crossbar Inc.
|
|
gptkbp:competitor
|
gptkb:ferroelectric_RAM
gptkb:magnetoresistive_RAM
phase-change memory
|
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gptkbp:contrastsWith
|
gptkb:SDRAM
|
|
gptkbp:dataRetention
|
non-volatile
|
|
gptkbp:dataSource
|
binary
multi-level
|
|
gptkbp:developedBy
|
various companies
|
|
gptkbp:endurance
|
high
|
|
gptkbp:energyEfficiency
|
high
|
|
gptkbp:firstDemonstrated
|
early 2000s
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
Resistive RAM (ReRAM)
|
|
gptkbp:market
|
emerging technology
|
|
gptkbp:material
|
metal oxide
|
|
gptkbp:operates
|
applying voltage to change resistance
|
|
gptkbp:researchInterest
|
reliability
scalability
multi-level cell operation
|
|
gptkbp:size
|
good
|
|
gptkbp:standardizedBy
|
ongoing
|
|
gptkbp:storesDataBy
|
changing resistance
|
|
gptkbp:structure
|
metal-insulator-metal
|
|
gptkbp:switchingMechanism
|
filamentary
interface-type
|
|
gptkbp:usedIn
|
mobile devices
Internet of Things devices
automotive electronics
|
|
gptkbp:writeSpeed
|
gptkb:fire
|
|
gptkbp:bfsParent
|
gptkb:SCM_(Storage_Class_Memory)
|
|
gptkbp:bfsLayer
|
8
|