Statements (52)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
data storage technology |
| gptkbp:advantage |
high endurance
fast read/write speeds lower density than flash higher cost than flash retains data without power |
| gptkbp:application |
IoT devices
wearable devices cache memory storage devices automotive microcontrollers |
| gptkbp:component |
magnetic tunnel junction (MTJ)
|
| gptkbp:contrastsWith |
gptkb:SDRAM
SRAM Flash memory |
| gptkbp:dataRetention |
10+ years
|
| gptkbp:developedBy |
1990s
|
| gptkbp:energyEfficiency |
true
|
| gptkbp:firstCommercialProduct |
2006
|
| gptkbp:fullName |
Magnetoresistive Random Access Memory
|
| https://www.w3.org/2000/01/rdf-schema#label |
MRAM
|
| gptkbp:inventedBy |
gptkb:IBM
|
| gptkbp:manufacturer |
gptkb:Samsung
gptkb:TSMC gptkb:GlobalFoundries gptkb:Everspin_Technologies |
| gptkbp:marketGrowth |
increasing
|
| gptkbp:nonVolatile |
true
|
| gptkbp:patent |
Stuart Parkin
|
| gptkbp:radiationResistant |
true
|
| gptkbp:readBy |
measuring resistance
|
| gptkbp:relatedTo |
magnetoresistance
spintronics tunnel magnetoresistance |
| gptkbp:replacedBy |
gptkb:SDRAM
gptkb:NOR_flash gptkb:EEPROM SRAM |
| gptkbp:size |
true
|
| gptkbp:storesDataBy |
magnetic states
|
| gptkbp:usedIn |
aerospace
embedded systems automotive electronics industrial applications |
| gptkbp:uses |
magnetic storage elements
|
| gptkbp:variant |
gptkb:STT-MRAM
Thermally Assisted MRAM Toggle MRAM |
| gptkbp:writeSpeed |
changing magnetic orientation
|
| gptkbp:bfsParent |
gptkb:SDRAM
|
| gptkbp:bfsLayer |
5
|