|
gptkbp:instanceOf
|
gptkb:SDRAM
gptkb:data_storage_technology
|
|
gptkbp:advantage
|
high endurance
fast read/write speeds
lower density than flash
higher cost than flash
retains data without power
|
|
gptkbp:application
|
IoT devices
wearable devices
cache memory
storage devices
automotive microcontrollers
|
|
gptkbp:component
|
magnetic tunnel junction (MTJ)
|
|
gptkbp:contrastsWith
|
gptkb:SDRAM
SRAM
Flash memory
|
|
gptkbp:dataRetention
|
10+ years
|
|
gptkbp:developedBy
|
1990s
|
|
gptkbp:energyEfficiency
|
true
|
|
gptkbp:firstCommercialProduct
|
2006
|
|
gptkbp:fullName
|
Magnetoresistive Random Access Memory
|
|
gptkbp:inventedBy
|
gptkb:IBM
|
|
gptkbp:manufacturer
|
gptkb:Samsung
gptkb:TSMC
gptkb:GlobalFoundries
gptkb:Everspin_Technologies
|
|
gptkbp:marketGrowth
|
increasing
|
|
gptkbp:nonVolatile
|
true
|
|
gptkbp:patent
|
Stuart Parkin
|
|
gptkbp:radiationResistant
|
true
|
|
gptkbp:readBy
|
measuring resistance
|
|
gptkbp:relatedTo
|
magnetoresistance
spintronics
tunnel magnetoresistance
|
|
gptkbp:replacedBy
|
gptkb:SDRAM
gptkb:NOR_flash
gptkb:EEPROM
SRAM
|
|
gptkbp:size
|
true
|
|
gptkbp:storesDataBy
|
magnetic states
|
|
gptkbp:usedIn
|
aerospace
embedded systems
automotive electronics
industrial applications
|
|
gptkbp:uses
|
magnetic storage elements
|
|
gptkbp:variant
|
gptkb:STT-MRAM
Thermally Assisted MRAM
Toggle MRAM
|
|
gptkbp:writeSpeed
|
changing magnetic orientation
|
|
gptkbp:bfsParent
|
gptkb:3D_XPoint_memory
gptkb:magnetoresistive_RAM
|
|
gptkbp:bfsLayer
|
7
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
MRAM
|