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gptkbp:instanceOf
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gptkb:SDRAM
random-access memory
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gptkbp:abbreviation
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Ferroelectric Random Access Memory
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gptkbp:advantage
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low power consumption
high endurance
fast write speed
non-volatility
higher cost than flash memory
lower storage density than flash memory
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gptkbp:commercialUse
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gptkb:Fujitsu
gptkb:Texas_Instruments
gptkb:Cypress_Semiconductor
Ramtron
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gptkbp:competitor
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gptkb:SDRAM
gptkb:EEPROM
gptkb:MRAM
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gptkbp:dataRetention
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10 years or more
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gptkbp:developedBy
|
1980s
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gptkbp:fullName
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Ferroelectric Random Access Memory
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|
https://www.w3.org/2000/01/rdf-schema#label
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FeRAM
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gptkbp:isNonVolatile
|
true
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gptkbp:isRandomAccess
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true
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gptkbp:isRewritable
|
yes
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gptkbp:isSensitiveToElectricFields
|
yes
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gptkbp:isSensitiveToMagneticFields
|
no
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gptkbp:isSensitiveToRadiation
|
no
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gptkbp:isSolidState
|
true
|
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gptkbp:material
|
gptkb:bismuth_ferrite
gptkb:lead_zirconate_titanate
ferroelectric layer
|
|
gptkbp:operatingSystem
|
1.8V to 3.6V
|
|
gptkbp:readBy
|
nanoseconds
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gptkbp:readWriteEndurance
|
10^12 cycles
|
|
gptkbp:storesDataBy
|
polarization of ferroelectric layer
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gptkbp:usedFor
|
wearable devices
automotive electronics
data logging
secure memory applications
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gptkbp:usedIn
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industrial automation
microcontrollers
medical devices
smart cards
RFID cards
energy metering
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gptkbp:writeSpeed
|
nanoseconds
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gptkbp:bfsParent
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gptkb:ferroelectric_RAM
gptkb:Ferroelectric_RAM
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gptkbp:bfsLayer
|
7
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