Statements (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
gptkb:phase-change_memory |
| gptkbp:advantage |
scalability
fast switching high endurance |
| gptkbp:alternativeTo |
gptkb:SDRAM
SRAM |
| gptkbp:canBe |
gptkb:random-access_memory
data storage |
| gptkbp:developedBy |
gptkb:Stanford_R._Ovshinsky
|
| gptkbp:firstDemonstrated |
1960s
|
| gptkbp:includesState |
crystalline
amorphous |
| gptkbp:marketedAs |
gptkb:PRAM
PCRAM phase-change memory (PCM) |
| gptkbp:material |
chalcogenide glass
|
| gptkbp:storesDataBy |
changing phase of material
|
| gptkbp:usedIn |
gptkb:3D_XPoint
gptkb:Intel_Optane |
| gptkbp:bfsParent |
gptkb:Energy_Conversion_Devices,_Inc.
gptkb:Stanford_R._Ovshinsky |
| gptkbp:bfsLayer |
6
|
| https://www.w3.org/2000/01/rdf-schema#label |
Ovonic memory
|