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gptkbp:instanceOf
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gptkb:SDRAM
resistive random-access memory
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gptkbp:abbreviation
|
Resistive Random-Access Memory
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gptkbp:advantage
|
lower power consumption
better scalability
faster switching speed
higher endurance
|
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gptkbp:alternativeTo
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gptkb:SDRAM
gptkb:NAND_flash
SRAM
|
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gptkbp:application
|
gptkb:artificial_intelligence
gptkb:Internet_of_Things
medical devices
wearable devices
mobile devices
edge computing
automotive electronics
in-memory computing
FPGA configuration memory
storage class memory
|
|
gptkbp:canBe
|
binary memory
multi-level memory
|
|
gptkbp:category
|
gptkb:microprocessor
emerging technology
memory technology
|
|
gptkbp:commercialization
|
2010s
|
|
gptkbp:contrastsWith
|
gptkb:SDRAM
|
|
gptkbp:dataRetention
|
high
|
|
gptkbp:developedBy
|
gptkb:Fujitsu
gptkb:HP_Labs
gptkb:Panasonic
Crossbar Inc.
|
|
gptkbp:endurance
|
high
|
|
gptkbp:firstDemonstrated
|
1960s
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
ReRAM
|
|
gptkbp:latency
|
low
|
|
gptkbp:material
|
transition metal oxides
perovskite oxides
chalcogenides
|
|
gptkbp:operatingSystem
|
low
|
|
gptkbp:size
|
high
|
|
gptkbp:storesDataBy
|
changing resistance
|
|
gptkbp:switchingMechanism
|
resistive switching
|
|
gptkbp:technology
|
emerging memory technology
|
|
gptkbp:usedFor
|
data storage
neuromorphic computing
embedded memory
|
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gptkbp:bfsParent
|
gptkb:3D_XPoint_memory
gptkb:DRAM_technology
gptkb:Ferroelectric_RAM
gptkb:resistive_RAM
|
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gptkbp:bfsLayer
|
7
|