Magnetoresistive RAM (MRAM)

GPTKB entity

Statements (48)
Predicate Object
gptkbp:instanceOf gptkb:SDRAM
random-access memory
gptkbp:abbreviation gptkb:MRAM
gptkbp:advantage higher cost
high endurance
non-volatility
fast read/write speeds
lower density than flash
gptkbp:canBe gptkb:storage-class_memory
cache memory
universal memory
gptkbp:commercialUse gptkb:IBM
gptkb:Samsung
gptkb:Everspin_Technologies
gptkbp:compatibleWith power to retain data
gptkbp:competitor gptkb:SDRAM
SRAM
gptkbp:dataRetention 10+ years
gptkbp:developedBy 1990s
gptkbp:endurance 10^15 cycles
gptkbp:energyEfficiency low standby power
gptkbp:fabricationProcess CMOS compatible
gptkbp:firstCommercialProduct 2006
gptkbp:firstDemonstrated gptkb:IBM
https://www.w3.org/2000/01/rdf-schema#label Magnetoresistive RAM (MRAM)
gptkbp:latency nanoseconds
gptkbp:marketedAs gptkb:Samsung
gptkb:Intel
gptkb:TSMC
gptkb:GlobalFoundries
gptkb:Everspin_Technologies
gptkbp:replacedBy gptkb:NOR_flash
gptkb:EEPROM
SRAM in some applications
gptkbp:standardizedBy gptkb:JEDEC
gptkbp:storesDataBy magnetic storage elements
gptkbp:usedIn aerospace
embedded systems
automotive electronics
industrial applications
gptkbp:uses magnetoresistance
spintronics
magnetic tunnel junction (MTJ)
gptkbp:variant Toggle MRAM
Spin-transfer torque MRAM (STT-MRAM)
Thermally Assisted MRAM (TA-MRAM)
gptkbp:bfsParent gptkb:SCM_(Storage_Class_Memory)
gptkbp:bfsLayer 8