Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
memory technology |
| gptkbp:abbreviation |
gptkb:ReRAM
|
| gptkbp:alternativeName |
RRAM
|
| gptkbp:application |
neuromorphic computing
embedded memory storage class memory |
| gptkbp:competitor |
gptkb:SDRAM
gptkb:magnetoresistive_RAM phase-change memory |
| gptkbp:dataRetention |
years
|
| gptkbp:developedBy |
gptkb:HP_Labs
gptkb:Panasonic Crossbar Inc. |
| gptkbp:feature |
low power consumption
scalability fast switching speed high endurance non-volatility |
| gptkbp:firstDemonstrated |
early 2000s
|
| https://www.w3.org/2000/01/rdf-schema#label |
resistive RAM
|
| gptkbp:material |
transition metal oxide
metal oxide |
| gptkbp:storesDataBy |
changing resistance
|
| gptkbp:structure |
metal-insulator-metal
|
| gptkbp:switchingMechanism |
filamentary
interface-type |
| gptkbp:usedIn |
gptkb:artificial_intelligence
mobile devices Internet of Things devices |
| gptkbp:writeSpeed |
nanoseconds
|
| gptkbp:bfsParent |
gptkb:Optane
|
| gptkbp:bfsLayer |
6
|