Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Chemical_Vapor_Deposition_Technique
|
| gptkbp:appliesTo |
gptkb:Carbon_Nanotube_Synthesis
gptkb:Silicon_Dioxide_Deposition gptkb:Silicon_Nitride_Deposition Graphene Growth |
| gptkbp:category |
gptkb:Physical_Vapor_Deposition_Methods
gptkb:Thermal_CVD |
| gptkbp:contrastsWith |
gptkb:Cold-Wall_CVD
|
| gptkbp:feature |
Heated Reaction Chamber Walls
Suitable for Large Substrates Uniform Temperature Distribution |
| gptkbp:limitation |
Possible Contamination from Chamber Walls
Slower Deposition Rate |
| gptkbp:operatesIn |
High Temperature
|
| gptkbp:requires |
Carrier Gas
Heated Furnace Precursor Gases |
| gptkbp:usedFor |
gptkb:Nanomaterial_Synthesis
gptkb:Semiconductor_Fabrication gptkb:Thin_Film_Deposition |
| gptkbp:bfsParent |
gptkb:Chemical_Vapor_Deposition_(CVD)
|
| gptkbp:bfsLayer |
6
|
| https://www.w3.org/2000/01/rdf-schema#label |
Hot-Wall CVD
|