Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_fabrication_process
|
| gptkbp:alternativeName |
SiO2 deposition
|
| gptkbp:depot |
SiO2
|
| gptkbp:method |
chemical vapor deposition (CVD)
sputtering thermal oxidation low-pressure chemical vapor deposition (LPCVD) plasma-enhanced chemical vapor deposition (PECVD) spin-on glass (SOG) |
| gptkbp:predecessor |
gptkb:ozone_(O3)
gptkb:silane_(SiH4) gptkb:dichlorosilane_(SiH2Cl2) oxygen (O2) tetraethyl orthosilicate (TEOS) |
| gptkbp:property |
chemical resistance
high thermal stability good electrical insulation |
| gptkbp:purpose |
dielectric layer
insulating layer masking layer |
| gptkbp:substrate |
silicon wafer
|
| gptkbp:temperature |
300-1100°C
|
| gptkbp:usedIn |
gptkb:microelectromechanical_systems_(MEMS)
integrated circuit manufacturing photonic device fabrication |
| gptkbp:bfsParent |
gptkb:Hot-Wall_CVD
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Silicon Dioxide Deposition
|