Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Thin Film Deposition Process
|
| gptkbp:alternativeTo |
gptkb:Silicon_Dioxide_Deposition
|
| gptkbp:canBe |
Conformal
Non-conformal Non-stoichiometric Stoichiometric |
| gptkbp:cause |
Film Cracking
Wafer Bow |
| gptkbp:depositedMaterial |
Silicon Nitride
|
| gptkbp:filmColor |
Colorless
Yellowish Brownish |
| gptkbp:filmProperty |
High Dielectric Strength
Good Barrier to Diffusion High Mechanical Strength Low Etch Rate in HF |
| gptkbp:filmStress |
Compressive
Tensile |
| gptkbp:filmThickness |
10 nm to several microns
|
| https://www.w3.org/2000/01/rdf-schema#label |
Silicon Nitride Deposition
|
| gptkbp:industry |
gptkb:MEMS
Microelectronics Photovoltaics |
| gptkbp:method |
Chemical Vapor Deposition
Low Pressure Chemical Vapor Deposition Plasma Enhanced Chemical Vapor Deposition |
| gptkbp:predecessor |
gptkb:Nitrogen
gptkb:Ammonia Dichlorosilane Silane |
| gptkbp:reactorType |
Batch Reactor
PECVD Reactor Single Wafer Reactor Tube Furnace |
| gptkbp:requires |
Temperature Control
Vacuum System Gas Delivery System |
| gptkbp:riskFactor |
High Temperature
Corrosive Byproducts Toxic Gases |
| gptkbp:temperature |
300-900°C
|
| gptkbp:usedFor |
Masking
Dielectric Layer Formation Diffusion Barrier Passivation Layer |
| gptkbp:usedIn |
Semiconductor Manufacturing
|
| gptkbp:bfsParent |
gptkb:Hot-Wall_CVD
|
| gptkbp:bfsLayer |
7
|