Chemical Vapor Deposition Technique
GPTKB entity
Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Deposition Technique
|
| gptkbp:advantage |
Complex Equipment
Conformal Coating Good Step Coverage High Purity Films High Temperature Requirement Toxic Precursors |
| gptkbp:alsoKnownAs |
gptkb:CVD
|
| gptkbp:appliesTo |
gptkb:MEMS
Microelectronics Protective Coatings Optical Coatings Solar Cells |
| gptkbp:canBeDeployedOn |
gptkb:jewelry
gptkb:Graphene Tungsten Silicon Aluminum Oxide Silicon Dioxide Silicon Nitride Titanium Nitride |
| https://www.w3.org/2000/01/rdf-schema#label |
Chemical Vapor Deposition Technique
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:involves |
Chemical Reactions of Gaseous Precursors
|
| gptkbp:operatesIn |
High Temperature
|
| gptkbp:precursorExample |
gptkb:Hydrogen
gptkb:Ammonia gptkb:Methane Silane |
| gptkbp:processor |
Chemical Process
|
| gptkbp:produces |
Amorphous Films
Polycrystalline Films Single Crystal Films |
| gptkbp:relatedTo |
gptkb:Atomic_Layer_Deposition
gptkb:Physical_Vapor_Deposition Evaporation Sputtering |
| gptkbp:usedFor |
gptkb:Nanomaterial_Synthesis
gptkb:Semiconductor_Fabrication gptkb:Thin_Film_Deposition Coating Production |
| gptkbp:variant |
gptkb:Atmospheric_Pressure_Chemical_Vapor_Deposition
Low Pressure Chemical Vapor Deposition Metal-Organic Chemical Vapor Deposition Plasma-Enhanced Chemical Vapor Deposition |
| gptkbp:bfsParent |
gptkb:Cold-Wall_CVD
gptkb:Hot-Wall_CVD |
| gptkbp:bfsLayer |
7
|