Chemical Vapor Deposition (CVD)
GPTKB entity
Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
thin film deposition technique
|
| gptkbp:advantage |
complex equipment
conformal coating good step coverage high purity films high temperature requirement toxic precursor gases |
| gptkbp:depot |
gptkb:jewelry
gptkb:silicon_dioxide gptkb:polysilicon gptkb:silicon_nitride gptkb:titanium_nitride graphene carbon nanotubes aluminum oxide |
| https://www.w3.org/2000/01/rdf-schema#label |
Chemical Vapor Deposition (CVD)
|
| gptkbp:introducedIn |
1960s
|
| gptkbp:involves |
substrate
gaseous precursors |
| gptkbp:processor |
gptkb:chemical_compound
vapor phase deposition |
| gptkbp:relatedTo |
gptkb:Atomic_Layer_Deposition_(ALD)
gptkb:Physical_Vapor_Deposition_(PVD) sputtering |
| gptkbp:requires |
high temperature
vacuum or controlled atmosphere |
| gptkbp:result |
solid material deposition
|
| gptkbp:usedFor |
semiconductor fabrication
MEMS fabrication coating production nanomaterial synthesis optical fiber production solar cell manufacturing |
| gptkbp:usedIn |
optical coatings
solar panels aerospace components cutting tools medical implants LED production decorative coatings hard disk manufacturing integrated circuit manufacturing tool coating |
| gptkbp:variant |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
gptkb:Cold-Wall_CVD gptkb:Hot-Wall_CVD gptkb:Low-Pressure_CVD_(LPCVD) gptkb:Metal-Organic_CVD_(MOCVD) gptkb:Plasma-Enhanced_CVD_(PECVD) |
| gptkbp:bfsParent |
gptkb:Diamonds
|
| gptkbp:bfsLayer |
5
|