Statements (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Chemical vapor deposition process
|
| gptkbp:advantage |
Good step coverage
High temperature requirement Possible thermal damage to substrates Uniform film deposition |
| gptkbp:commonMaterialsDeposited |
gptkb:Silicon_dioxide
Metals Polysilicon Silicon nitride |
| https://www.w3.org/2000/01/rdf-schema#label |
Thermal CVD
|
| gptkbp:inventedBy |
20th century
|
| gptkbp:operates |
Thermal energy
|
| gptkbp:produces |
Solid material on substrate
|
| gptkbp:relatedTo |
Atomic layer deposition
Low-pressure CVD Plasma-enhanced CVD |
| gptkbp:requires |
Heated substrate
Precursor gases |
| gptkbp:temperature |
400-1200°C
|
| gptkbp:usedFor |
Semiconductor fabrication
Thin film deposition Coating production |
| gptkbp:usedIn |
Microelectronics
MEMS fabrication Solar cells |
| gptkbp:bfsParent |
gptkb:Cold-Wall_CVD
gptkb:Hot-Wall_CVD |
| gptkbp:bfsLayer |
7
|