Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
vertical electrical connection |
| gptkbp:alternativeTo |
wire bonding
micro-bumps |
| gptkbp:application |
image sensors
logic-memory integration memory stacking |
| gptkbp:challenge |
cost
thermal stress yield loss |
| gptkbp:contrastsWith |
gptkb:flip_chip_technology
wire bonding |
| gptkbp:enables |
lower latency
improved performance lower power consumption high bandwidth interconnects shorter signal paths heterogeneous integration higher integration density high density interconnects reduced form factor shorter interconnect lengths vertical stacking of chips |
| gptkbp:fabricationProcess |
chemical vapor deposition
deep reactive-ion etching |
| https://www.w3.org/2000/01/rdf-schema#label |
TSV (Through-Silicon Via)
|
| gptkbp:introducedIn |
2000s
|
| gptkbp:material |
copper
tungsten |
| gptkbp:relatedTo |
gptkb:Fan-Out_Wafer-Level_Packaging_(FOWLP)
gptkb:System-in-Package_(SiP) gptkb:Moore's_Law heterogeneous integration |
| gptkbp:standardizedBy |
gptkb:JEDEC
|
| gptkbp:usedIn |
gptkb:3D_DRAM
gptkb:3D_NAND_flash gptkb:3D_ICs gptkb:High_Bandwidth_Memory_(HBM) mobile devices ASICs FPGAs processors graphics cards advanced packaging 3D integrated circuits |
| gptkbp:bfsParent |
gptkb:HBM2
gptkb:HBM |
| gptkbp:bfsLayer |
6
|