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gptkbp:instanceOf
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gptkb:technology
|
|
gptkbp:application
|
gptkb:machine_learning
data centers
high-performance computing
gaming GPUs
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|
gptkbp:developedBy
|
gptkb:JEDEC
|
|
gptkbp:feature
|
low power consumption
high bandwidth
3D-stacked memory
wide interface
high energy efficiency
close proximity to processor
high pin count
multi-channel architecture
parallel data access
reduced board space
vertical stacking
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|
gptkbp:firstReleased
|
2013
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|
gptkbp:fullName
|
gptkb:High_Bandwidth_Memory
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
HBM
|
|
gptkbp:interface
|
gptkb:TSV_(Through-Silicon_Via)
|
|
gptkbp:marketedAs
|
gptkb:Samsung
gptkb:SK_Hynix
Micron
|
|
gptkbp:maxBandwidthPerStack
|
128 GB/s
|
|
gptkbp:memoryBusWidth
|
1024 bits
|
|
gptkbp:memoryType
|
gptkb:SDRAM
|
|
gptkbp:predecessor
|
gptkb:HBM2
|
|
gptkbp:relatedStandard
|
gptkb:HBM2
gptkb:GDDR6
gptkb:HBM2E
gptkb:HBM3
|
|
gptkbp:stackedDieCount
|
up to 8
|
|
gptkbp:standardizedBy
|
gptkb:JEDEC
|
|
gptkbp:successor
|
gptkb:GDDR5
|
|
gptkbp:type
|
gptkb:2.5D_IC
|
|
gptkbp:usedBy
|
gptkb:AMD
gptkb:NVIDIA
gptkb:Samsung
gptkb:Intel
gptkb:SK_Hynix
|
|
gptkbp:usedIn
|
gptkb:AI_accelerators
industrial equipment
supercomputers
ASICs
FPGAs
graphics cards
data processing units
|
|
gptkbp:bfsParent
|
gptkb:JEDEC
|
|
gptkbp:bfsLayer
|
5
|