Statements (35)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
data storage technology |
| gptkbp:advantage |
lower power consumption
faster performance greater capacity |
| gptkbp:announced |
2013
|
| gptkbp:application |
gptkb:consumer_electronics
data centers mobile devices enterprise storage |
| gptkbp:cellType |
gptkb:QLC
gptkb:MLC gptkb:SLC gptkb:TLC |
| gptkbp:developedBy |
gptkb:Samsung
gptkb:Intel gptkb:Toshiba gptkb:Micron_Technology gptkb:SK_Hynix |
| gptkbp:feature |
lower cost per bit
higher storage density improved endurance stacked memory cells vertical cell structure |
| https://www.w3.org/2000/01/rdf-schema#label |
3D NAND flash
|
| gptkbp:marketedAs |
3D XPoint (by Intel and Micron)
BiCS (by Toshiba) V-NAND (by Samsung) |
| gptkbp:replacedBy |
gptkb:planar_NAND
|
| gptkbp:technology |
gptkb:SDRAM
|
| gptkbp:usedIn |
solid-state drives
USB flash drives memory cards |
| gptkbp:bfsParent |
gptkb:TSV_(Through-Silicon_Via)
|
| gptkbp:bfsLayer |
7
|