|
gptkbp:instanceOf
|
gptkb:personal_computer
|
|
gptkbp:announced
|
2016
|
|
gptkbp:application
|
gptkb:machine_learning
data centers
scientific computing
supercomputers
|
|
gptkbp:comparedToGDDR5
|
higher bandwidth
lower power consumption
smaller footprint
|
|
gptkbp:dataRate
|
up to 2.0 Gbps per pin
|
|
gptkbp:developedBy
|
gptkb:JEDEC
|
|
gptkbp:feature
|
low power consumption
high bandwidth
3D-stacked memory
wide interface
|
|
gptkbp:fullName
|
gptkb:High_Bandwidth_Memory_2
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
HBM2
|
|
gptkbp:JEDECStandard
|
gptkb:JESD235B
|
|
gptkbp:marketedAs
|
gptkb:Samsung
gptkb:SK_Hynix
Micron
|
|
gptkbp:maximumBandwidthPerStack
|
256 GB/s
|
|
gptkbp:maxStackSize
|
8 GB
|
|
gptkbp:memoryType
|
gptkb:SDRAM
|
|
gptkbp:notableProduct
|
gptkb:NVIDIA_Tesla_V100
gptkb:AMD_Radeon_VII
gptkb:AMD_Radeon_Vega_Frontier_Edition
gptkb:Intel_Xe_HPC_Ponte_Vecchio
gptkb:NVIDIA_Quadro_GV100
|
|
gptkbp:numberOfChannelsPerStack
|
8
|
|
gptkbp:operatingSystem
|
1.2 V
|
|
gptkbp:predecessor
|
gptkb:HBM2E
|
|
gptkbp:stackable
|
up to 8 dies
|
|
gptkbp:standardizedBy
|
gptkb:JEDEC
|
|
gptkbp:successor
|
gptkb:HBM
|
|
gptkbp:technology
|
gptkb:TSV_(Through-Silicon_Via)
|
|
gptkbp:usedBy
|
gptkb:AMD
gptkb:NVIDIA
gptkb:Samsung
gptkb:Intel
gptkb:SK_Hynix
Micron
|
|
gptkbp:usedIn
|
gptkb:AI_accelerators
high-performance computing
industrial equipment
graphics cards
|
|
gptkbp:width
|
1024 bits per stack
|
|
gptkbp:bfsParent
|
gptkb:NVIDIA_Tesla_V100
|
|
gptkbp:bfsLayer
|
5
|