Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:memory_technology
|
| gptkbp:advantage |
lower power consumption
improved bandwidth higher density |
| gptkbp:application |
gptkb:AI_accelerators
high-performance computing servers graphics cards |
| gptkbp:commercialUse |
2013
|
| gptkbp:developedBy |
gptkb:Samsung
gptkb:SK_Hynix Micron |
| gptkbp:feature |
vertical integration
stacked memory cells |
| gptkbp:isA |
gptkb:SDRAM
|
| gptkbp:relatedTo |
gptkb:HBM
TSV Wide I/O |
| gptkbp:usedIn |
computers
mobile devices |
| gptkbp:bfsParent |
gptkb:TSV_(Through-Silicon_Via)
|
| gptkbp:bfsLayer |
8
|
| https://www.w3.org/2000/01/rdf-schema#label |
3D DRAM
|