Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
integrated circuit technology
|
| gptkbp:advantage |
improved performance
lower power consumption higher integration density shorter interconnects |
| gptkbp:alsoKnownAs |
three-dimensional integrated circuits
|
| gptkbp:application |
high-performance computing
mobile devices memory chips |
| gptkbp:challenge |
thermal management
manufacturing complexity yield issues |
| gptkbp:commercialUse |
early 2010s
|
| gptkbp:developedBy |
major semiconductor companies
|
| gptkbp:enables |
reduced latency
increased bandwidth heterogeneous integration smaller form factors |
| gptkbp:example |
gptkb:High_Bandwidth_Memory_(HBM)
Xilinx 3D FPGAs 3D NAND flash memory |
| gptkbp:feature |
through-silicon vias (TSVs)
vertical stacking of dies multiple layers of active electronic components |
| https://www.w3.org/2000/01/rdf-schema#label |
3D ICs
|
| gptkbp:relatedTo |
gptkb:Moore's_Law
system-in-package (SiP) 2.5D ICs |
| gptkbp:standardizedBy |
gptkb:JEDEC
|
| gptkbp:usedBy |
semiconductor industry
|
| gptkbp:bfsParent |
gptkb:eSilicon
gptkb:TSV_(Through-Silicon_Via) |
| gptkbp:bfsLayer |
7
|