Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
Material |
| gptkbp:alternativeTo |
bulk silicon
|
| gptkbp:developedBy |
1970s
|
| gptkbp:enables |
lower power consumption
radiation hardness faster switching better isolation smaller device geometries |
| gptkbp:hasComponent |
substrate
insulating layer silicon layer |
| https://www.w3.org/2000/01/rdf-schema#label |
silicon-on-insulator
|
| gptkbp:improves |
device performance
|
| gptkbp:insulatingLayerMaterial |
gptkb:silicon_dioxide
|
| gptkbp:manufacturer |
SIMOX process
bonding and etch-back process |
| gptkbp:reduces |
leakage current
parasitic capacitance |
| gptkbp:usedBy |
gptkb:IBM
gptkb:AMD gptkb:STMicroelectronics gptkb:GlobalFoundries |
| gptkbp:usedIn |
gptkb:CMOS_technology
high-performance computing microelectronics integrated circuits photonic devices mobile processors RF applications |
| gptkbp:bfsParent |
gptkb:SOI_MOSFET
|
| gptkbp:bfsLayer |
7
|