Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:battery
|
| gptkbp:contrastsWith |
gptkb:FinFET
gptkb:SOI_MOSFET |
| gptkbp:dominantIn |
gptkb:CMOS_technology
|
| gptkbp:drainedBy |
semiconductor region
|
| gptkbp:hasBodyEffect |
true
|
| gptkbp:hasBulkContact |
body terminal
|
| gptkbp:hasFourTerminals |
true
|
| gptkbp:hasGate |
metal-oxide-semiconductor gate
|
| gptkbp:hasLatchupRisk |
true
|
| gptkbp:hasParasiticBJT |
true
|
| gptkbp:hasShortChannelEffects |
true
|
| gptkbp:hasType |
gptkb:planar_MOSFET
|
| https://www.w3.org/2000/01/rdf-schema#label |
bulk MOSFET
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:shape |
semiconductor substrate
|
| gptkbp:source |
semiconductor region
|
| gptkbp:substrate |
bulk silicon
|
| gptkbp:usedFor |
gptkb:digital_logic
analog circuits |
| gptkbp:usedIn |
integrated circuits
|
| gptkbp:bfsParent |
gptkb:SOI_MOSFET
|
| gptkbp:bfsLayer |
7
|