Statements (20)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:battery
gptkb:microprocessor transistor |
| gptkbp:advantage |
better scalability
lower leakage current reduced short channel effects |
| gptkbp:alternativeTo |
gptkb:FinFET
|
| gptkbp:application |
high performance computing
low power electronics |
| gptkbp:channel_type |
fully depleted
|
| gptkbp:contrastsWith |
gptkb:partially_depleted_SOI_MOSFET
|
| gptkbp:gate_control |
improved
|
| https://www.w3.org/2000/01/rdf-schema#label |
fully depleted SOI MOSFET
|
| gptkbp:structure |
buried oxide layer
thin silicon film |
| gptkbp:substrate |
insulating layer
|
| gptkbp:technology |
gptkb:Silicon_on_Insulator
|
| gptkbp:used_in |
advanced CMOS technology nodes
|
| gptkbp:bfsParent |
gptkb:SOI_MOSFET
|
| gptkbp:bfsLayer |
7
|