Statements (54)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
|
| gptkbp:advantage |
low power consumption
high performance improved scalability reduced leakage current better electrostatic control |
| gptkbp:application |
gptkb:artificial_intelligence
IoT devices wireless communications mobile devices automotive electronics |
| gptkbp:contrastsWith |
gptkb:bulk_CMOS
partially depleted SOI |
| gptkbp:developedBy |
gptkb:STMicroelectronics
gptkb:GlobalFoundries |
| gptkbp:feature |
buried oxide layer
body biasing capability fully depleted channel low variability no need for channel doping no need for deep trench isolation no need for deep wells no need for field implant no need for field oxide no need for field plate no need for field ring no need for field shield no need for field stop no need for guard rings no need for halo implants no need for isolation wells no need for pocket implants no need for punch-through stoppers no need for retrograde wells no need for shallow trench isolation no need for triple wells no need for well implants simpler process integration soft error immunity ultra-thin silicon layer |
| https://www.w3.org/2000/01/rdf-schema#label |
FD-SOI
|
| gptkbp:nodeAvailable |
12nm
22nm 28nm |
| gptkbp:relatedTo |
gptkb:FinFET
gptkb:bulk_CMOS SOI (Silicon On Insulator) |
| gptkbp:standsFor |
Fully Depleted Silicon On Insulator
|
| gptkbp:usedIn |
gptkb:system-on-chip_(SoC)
microprocessors integrated circuits |
| gptkbp:bfsParent |
gptkb:SOI_(Silicon_on_Insulator)
gptkb:SOI_MOSFET |
| gptkbp:bfsLayer |
7
|