partially depleted SOI MOSFET
GPTKB entity
Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:microprocessor
transistor |
| gptkbp:advantage |
history effect
kink effect lower parasitic capacitance |
| gptkbp:application |
high performance digital circuits
|
| gptkbp:body_contact |
often floating
|
| gptkbp:channel_type |
partially depleted channel
|
| gptkbp:contrastsWith |
gptkb:fully_depleted_SOI_MOSFET
|
| gptkbp:feature |
floating body effect
improved speed over bulk MOSFET reduced short channel effects |
| gptkbp:gate_type |
MOS (Metal-Oxide-Semiconductor)
|
| https://www.w3.org/2000/01/rdf-schema#label |
partially depleted SOI MOSFET
|
| gptkbp:substrate |
buried oxide layer
|
| gptkbp:technology |
SOI (Silicon On Insulator)
|
| gptkbp:used_in |
integrated circuits
RF circuits low power applications |
| gptkbp:bfsParent |
gptkb:SOI_MOSFET
|
| gptkbp:bfsLayer |
7
|