Atmospheric Pressure CVD (APCVD)
GPTKB entity
Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Chemical_Vapor_Deposition_technique
|
| gptkbp:abbreviation |
gptkb:Atmospheric_Pressure_Chemical_Vapor_Deposition
|
| gptkbp:advantage |
high throughput
less uniform films low equipment cost lower film quality compared to LPCVD |
| gptkbp:category |
gptkb:nanotechnology
materials science microelectronics |
| gptkbp:depot |
gptkb:silicon_dioxide
gptkb:polysilicon gptkb:silicon_nitride |
| https://www.w3.org/2000/01/rdf-schema#label |
Atmospheric Pressure CVD (APCVD)
|
| gptkbp:operatesIn |
atmospheric pressure
|
| gptkbp:precursorState |
gptkb:gasoline
|
| gptkbp:relatedTo |
gptkb:Low_Pressure_CVD_(LPCVD)
gptkb:Plasma_Enhanced_CVD_(PECVD) |
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication solar cell manufacturing |
| gptkbp:bfsParent |
gptkb:Chemical_Vapor_Deposition_(CVD)
|
| gptkbp:bfsLayer |
6
|