Statements (26)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
thin film deposition method |
| gptkbp:advantage |
good step coverage
high deposition rate lower substrate temperature |
| gptkbp:alternativeTo |
gptkb:thermal_CVD
|
| gptkbp:depot |
gptkb:amorphous_silicon
gptkb:silicon_dioxide gptkb:silicon_nitride silicon oxynitride |
| gptkbp:developedBy |
1970s
|
| gptkbp:enables |
low temperature deposition
|
| https://www.w3.org/2000/01/rdf-schema#label |
Plasma-Enhanced CVD (PECVD)
|
| gptkbp:requires |
gptkb:RF_power_supply
vacuum chamber |
| gptkbp:usedFor |
barrier layers
passivation layers antireflection coatings dielectric films |
| gptkbp:usedIn |
microelectronics
semiconductor manufacturing solar cell fabrication |
| gptkbp:uses |
gptkb:plasma
precursor gases |
| gptkbp:bfsParent |
gptkb:Chemical_Vapor_Deposition_(CVD)
|
| gptkbp:bfsLayer |
6
|