Atomic Layer Deposition (ALD)
GPTKB entity
Statements (49)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
thin film deposition technique
|
| gptkbp:advantage |
precise thickness control
excellent step coverage uniformity on complex surfaces |
| gptkbp:alternativeName |
atomic layer epitaxy
|
| gptkbp:appliesTo |
photovoltaics
barrier layers battery electrodes catalyst supports passivation layers protective coatings OLED displays gate dielectrics |
| gptkbp:characterizedBy |
self-limiting surface reactions
|
| gptkbp:commonMaterialsDeposited |
SiO2
Al2O3 ZnO HfO2 TiO2 |
| gptkbp:developedBy |
1970s
|
| gptkbp:enables |
high aspect ratio coating
multilayer structures ultrathin film growth |
| https://www.w3.org/2000/01/rdf-schema#label |
Atomic Layer Deposition (ALD)
|
| gptkbp:inventedBy |
gptkb:Tuomo_Suntola
|
| gptkbp:limitation |
precursor availability
slow deposition rate thermal budget constraints |
| gptkbp:precursorType |
gaseous precursors
inorganic precursors metal-organic precursors |
| gptkbp:processor |
cyclic process
|
| gptkbp:relatedTo |
gptkb:physical_vapor_deposition
chemical vapor deposition molecular layer deposition |
| gptkbp:step |
precursor exposure
purge step reactant exposure second purge step |
| gptkbp:usedFor |
precise thickness control
atomic-scale deposition conformal coating of surfaces |
| gptkbp:usedIn |
gptkb:nanotechnology
semiconductor manufacturing solar cells energy storage devices MEMS fabrication |
| gptkbp:bfsParent |
gptkb:Chemical_Vapor_Deposition_(CVD)
|
| gptkbp:bfsLayer |
6
|