Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:advantage |
high throughput
good film uniformity high temperature process low contamination |
| gptkbp:depositsMaterial |
gptkb:silicon_dioxide
gptkb:polysilicon gptkb:silicon_nitride silicon oxynitride |
| gptkbp:filmQuality |
good step coverage
conformal coverage low pinhole density |
| https://www.w3.org/2000/01/rdf-schema#label |
Low-Pressure CVD (LPCVD)
|
| gptkbp:operatesIn |
reduced pressure
|
| gptkbp:precursorGas |
gptkb:silane_(SiH4)
gptkb:dichlorosilane_(SiH2Cl2) gptkb:phosphine_(PH3) ammonia (NH3) |
| gptkbp:relatedTo |
gptkb:Atmospheric_Pressure_CVD_(APCVD)
gptkb:Plasma-Enhanced_CVD_(PECVD) |
| gptkbp:temperature |
500-900°C
|
| gptkbp:usedFor |
gptkb:microelectromechanical_systems_(MEMS)
semiconductor manufacturing thin film deposition |
| gptkbp:usedIn |
solar cell manufacturing
MEMS device fabrication integrated circuit fabrication |
| gptkbp:bfsParent |
gptkb:Chemical_Vapor_Deposition_(CVD)
|
| gptkbp:bfsLayer |
6
|