Statements (46)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
chemical vapor deposition technique
|
| gptkbp:advantage |
scalability
high throughput uniformity |
| gptkbp:alsoKnownAs |
gptkb:MOCVD
gptkb:metalorganic_chemical_vapor_deposition |
| gptkbp:depositsMaterial |
gptkb:II-VI_semiconductors
gptkb:III-V_semiconductors oxides nitrides |
| gptkbp:enables |
high purity films
large area deposition precise control of layer thickness |
| https://www.w3.org/2000/01/rdf-schema#label |
Metal-Organic CVD (MOCVD)
|
| gptkbp:inventedBy |
gptkb:Harold_M._Manasevit
1960s |
| gptkbp:limitation |
safety concerns
complex precursor chemistry cost of precursors |
| gptkbp:notableFor |
growing GaAs films
growing GaN films growing InP films |
| gptkbp:operatesIn |
high temperature
|
| gptkbp:precursors |
hydrides
metal-organic compounds |
| gptkbp:processor |
gptkb:vapor_phase_epitaxy
|
| gptkbp:relatedTo |
atomic layer deposition
chemical vapor deposition molecular beam epitaxy |
| gptkbp:requires |
gas flow control
reactor chamber substrate heating |
| gptkbp:riskFactor |
pyrophoric materials
toxic precursors |
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication epitaxial growth LED manufacturing laser diode fabrication solar cell fabrication |
| gptkbp:usedIn |
microelectronics
optoelectronics power electronics photovoltaics |
| gptkbp:bfsParent |
gptkb:Chemical_Vapor_Deposition_(CVD)
|
| gptkbp:bfsLayer |
6
|