Statements (25)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:bandGap |
direct (for x < 0.45)
indirect (for x > 0.45) |
| gptkbp:category |
gptkb:III-V_semiconductor
|
| gptkbp:chemicalFormula |
AlxGa1−xAs
|
| gptkbp:containsElement |
gptkb:gallium
gptkb:poisoning aluminum |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:discoveredIn |
1960s
|
| gptkbp:grownBy |
gptkb:metalorganic_chemical_vapor_deposition
molecular beam epitaxy |
| gptkbp:hasBandGapEnergy |
1.42–2.16 eV (depending on x)
|
| https://www.w3.org/2000/01/rdf-schema#label |
AlGaAs
|
| gptkbp:latticeConstant |
5.653 Å (for GaAs)
|
| gptkbp:relatedTo |
gptkb:GaAs
AlAs |
| gptkbp:usedFor |
optoelectronic devices
high-speed electronics |
| gptkbp:usedIn |
LEDs
laser diodes solar cells heterojunction bipolar transistors |
| gptkbp:bfsParent |
gptkb:HEMT
|
| gptkbp:bfsLayer |
7
|