metalorganic chemical vapor deposition
GPTKB entity
Statements (33)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:chemical_compound
|
| gptkbp:abbreviation |
gptkb:MOCVD
|
| gptkbp:alternativeTo |
molecular beam epitaxy
liquid phase epitaxy |
| gptkbp:depot |
oxides
compound semiconductors II-VI materials III-V materials |
| gptkbp:enables |
quantum wells
heterostructures superlattices epitaxial growth |
| https://www.w3.org/2000/01/rdf-schema#label |
metalorganic chemical vapor deposition
|
| gptkbp:inventedBy |
1960s
|
| gptkbp:operatesIn |
high temperature
|
| gptkbp:precursorsInclude |
gptkb:trimethylaluminum
phosphine arsine trimethylgallium |
| gptkbp:relatedTo |
atomic layer deposition
chemical vapor deposition |
| gptkbp:requires |
substrate
|
| gptkbp:usedBy |
electronics industry
optoelectronics industry photonics industry |
| gptkbp:usedFor |
thin film deposition
semiconductor fabrication LED manufacturing solar cell production |
| gptkbp:uses |
reactive gases
metalorganic precursors |
| gptkbp:bfsParent |
gptkb:GaN
|
| gptkbp:bfsLayer |
6
|