|
gptkb:indium_phosphide
|
5.8687 Å
|
|
gptkb:Y3Fe5O12
|
12.376 Å
|
|
gptkb:GaAs
|
5.653 Å
|
|
gptkb:monolayer_MoS2
|
~3.16 Å
|
|
gptkb:Indium_Phosphide_(InP)
|
5.8687 Å
|
|
gptkb:Gallium_Arsenide
|
5.653 Å
|
|
gptkb:Indium_gallium_arsenide
|
5.8687 Å (for In0.53Ga0.47As)
|
|
gptkb:Gallium_Nitride_(GaN)
|
a = 3.189 Å, c = 5.185 Å
|
|
gptkb:SiGe
|
varies with Ge content
|
|
gptkb:aluminum_arsenide
|
5.6611 Å
|
|
gptkb:Yttrium_Aluminum_Garnet
|
12.01 Å
|
|
gptkb:Indium_phosphide
|
0.58687 nm
|
|
gptkb:silicon_germanium
|
between silicon and germanium
|
|
gptkb:YIG
|
12.376 Å
|
|
gptkb:Indium_Phosphide
|
5.8687 Å
|
|
gptkb:CdTe
|
0.648 nm
|
|
gptkb:ZnTe
|
6.10 Å
|
|
gptkb:Gallium_Arsenide_(GaAs)
|
5.653 Å
|
|
gptkb:InGaAs
|
5.8687 Å (for In0.53Ga0.47As)
|
|
gptkb:Graphene
|
2.46 Å
|