|
gptkb:monolayer_MoS2
|
~3.16 Å
|
|
gptkb:Indium_Phosphide_(InP)
|
5.8687 Å
|
|
gptkb:AlGaAs
|
5.653 Å (for GaAs)
|
|
gptkb:silicon_germanium
|
between silicon and germanium
|
|
gptkb:gallium_arsenide
|
5.653 Å
|
|
gptkb:Yttrium_Aluminum_Garnet
|
12.01 Å
|
|
gptkb:GaP
|
5.4505 Å
|
|
gptkb:SiGe
|
varies with Ge content
|
|
gptkb:Gallium_Nitride_(GaN)
|
a = 3.189 Å, c = 5.185 Å
|
|
gptkb:YIG
|
12.376 Å
|
|
gptkb:indium_phosphide_(InP)
|
5.8687 Å
|
|
gptkb:ZnTe
|
6.10 Å
|
|
gptkb:Indium_Phosphide
|
5.8687 Å
|
|
gptkb:Indium_phosphide
|
0.58687 nm
|
|
gptkb:Indium_gallium_arsenide
|
5.8687 Å (for In0.53Ga0.47As)
|
|
gptkb:Gallium_arsenide
|
5.653 Å
|
|
gptkb:InP
|
5.8687 Å
|
|
gptkb:aluminum_arsenide
|
5.6611 Å
|
|
gptkb:InGaAs
|
5.8687 Å (for In0.53Ga0.47As)
|
|
gptkb:indium_phosphide
|
5.8687 Å
|