aluminum gallium arsenide (AlGaAs)
GPTKB entity
Statements (27)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
semiconductor material
|
| gptkbp:band_gap_energy |
1.42–2.16 eV
|
| gptkbp:band_gap_type |
direct
|
| gptkbp:category |
III-V compound semiconductor
|
| gptkbp:chemicalFormula |
AlxGa1−xAs
|
| gptkbp:containsElement |
gptkb:gallium
gptkb:poisoning aluminum |
| gptkbp:crystalSystem |
gptkb:zinc_blende
|
| gptkbp:discoveredBy |
1960s
|
| gptkbp:grown_by |
gptkb:metalorganic_chemical_vapor_deposition
molecular beam epitaxy |
| https://www.w3.org/2000/01/rdf-schema#label |
aluminum gallium arsenide (AlGaAs)
|
| gptkbp:lattice_constant |
5.653 Å (for GaAs)
|
| gptkbp:relatedTo |
gptkb:gallium_arsenide
gptkb:aluminum_arsenide |
| gptkbp:symbol |
gptkb:AlGaAs
|
| gptkbp:used_in |
photodetectors
laser diodes solar cells light-emitting diodes heterojunction bipolar transistors |
| gptkbp:usedFor |
quantum wells
heterostructures superlattices |
| gptkbp:bfsParent |
gptkb:high_electron_mobility_transistors_(HEMTs)
|
| gptkbp:bfsLayer |
7
|